Japan Intellectual Property Rights: ALL-IN-ONE DRY DEVELOPMENT FOR METAL-CONTAINING PHOTORESIST

Japan, Sept. 18 -- LAM RESEARCH CORPORATION has got intellectual property rights for 'ALL-IN-ONE DRY DEVELOPMENT FOR METAL-CONTAINING PHOTORESIST.' Other related details are as follows:

Application Number: JP,2025-070054

Category (FI): H10P76/40,H01L21/30,569@H,H01L21/302,105@A,H10P76/00,569@H,H10P50/20,105@A,H10P50/26,H10P50/28,G03F7/36,G03F7/40,501

Stage: SOLUTION: To allow process condition management to facilitate the integration of dry development and post-development processing into a single process chamber, eliminating the need for a separate post-dry development bake step during semiconductor manufacturing, and perform thermal dry development and plasma dry development in the same chamber, and enable the operations of thermal dry development, plasma dry development, and passivation (O2 flash processing), or thermal dry development, plasma dry development, passivation, and curing without wafer transfer.SELECTED DRAWING: Figure 3 (Grant)

Filing Date: April 22, 2025

Publication Date: July 30, 2025

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.