Japan, Feb. 24 -- LAM RESEARCH CORPORATION has got intellectual property rights for 'ATOMIC LAYER ETCHING SYSTEM FOR SELECTIVELY ETCHING WITH HALOGEN-BASED COMPOUND.' Other related details are as follows:
Application Number: JP,2024-067862
Category (FI): H01L21/268@J,H01L21/26@J,H10P34/00@J,H10P50/24,H10P50/26,H10P50/28,H01L21/302,101@G,H10P50/20,105@A,H10P50/20,101@G,H10P50/20,101@C,H10P34/42@J,H01L21/302,101@C,H01L21/302,105@A
Stage: PROBLEM TO BE SOLVED: To provide a substrate processing system.SOLUTION: A substrate processing system 100 includes a processing chamber 108, a substrate support 110, a heat source 126, a gas delivery system 160 and a controller 180. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform isotropic atomic layer etching processing. The isotropic atomic layer etching processing includes the steps of: during the iteration, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to a first process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: April 19, 2024
Publication Date: July 17, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
