Japan, Sept. 18 -- POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION has got intellectual property rights for 'DEVICE WITH LOW FREQUENCY NOISE REJECTION.' Other related details are as follows:
Application Number: JP,2024-227199
Category (FI): H10D30/67,103@B,H10D30/67,104@A
Stage: PROBLEM TO BE SOLVED: To provide a low noise transistor from which a ricker noise is removed.SOLUTION: In the transistor, a phase composite channel layer 130 in which quantum dots 131 are distributed in an amorphous matrix 132 and a surface stabilizing layer 140 in contact with the phase composite channel layer are formed. The passivation layer has a repeating structure of an inorganic insulating layer and an organic shielding layer. The surface passivation layer is formed in the space between the source electrode 150 and the drain electrode 160, and since the quantum dots of the phase composite channel layer have quantized states, carriers trapped in the quantum dots are limited, and even if a current is generated by a drain-source voltage in the phase composite channel layer, the carriers trapped in the quantum dots maintain a constant level. Accordingly, the drain-source current is constant even when the gate voltage increases, and the noise component of the gate voltage is not reflected in the drain-source current.SELECTED DRAWING: Figure 2 (Grant)
Filing Date: Dec. 24, 2024
Publication Date: Feb. 19
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
