Japan, Feb. 24 -- ABLIC INC has got intellectual property rights for 'ESD PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2022-047836
Category (FI): H01L27/04@H,H01L27/06,102@A,H01L27/06,311@A,H01L27/06,311@B,H10D84/80,101@A,H10D84/80,102@A,H10D84/80,102@B,H10D89/60
Stage: PROBLEM TO BE SOLVED: To provide an ESD protection circuit that can reduce the layout area, reduce a leakage current, and prevent malfunctions.SOLUTION: An ESD protection circuit 100 connected between a VDD terminal and a VSS terminal in parallel with an internal circuit C that operates at a specified operating voltage includes an NMOS transistor 110 in which an N-type high concentration drain region 114a is connected to the VDD terminal, and a gate 116 is in a floating state, and a high concentration source region 114b is connected to the VSS terminal, and a threshold voltage and a trigger voltage Vtrig of a parasitic bipolar transistor of the NMOS transistor 110 are higher than the operating voltage and lower than the breakdown voltage of the internal circuit C.SELECTED DRAWING: Figure 2A (Grant)
Filing Date: March 24, 2022
Publication Date: Oct. 5, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
