Japan Intellectual Property Rights: FIELD EFFECT TRANSISTOR INCLUDING TRANSITION METAL DICHALCOGENIDE COVERED WITH PROTECTIVE FILM, AND METHOD OF MANUFACTURING THE SAME

Japan, Jan. 20 -- INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIV has got intellectual property rights for 'FIELD EFFECT TRANSISTOR INCLUDING TRANSITION METAL DICHALCOGENIDE COVERED WITH PROTECTIVE FILM, AND METHOD OF MANUFACTURING THE SAME.' Other related details are as follows:

Application Number: JP,2025-066761

Category (FI): H10P14/68@A,H10D30/67,104@A,H10D30/67,103@B,H01L21/312@A

Stage: Grant (IP right document published.)

Filing Date: April 15, 2025

Publication Date: Oct. 27, 2025

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.