Japan, Feb. 24 -- TOKYO ELECTRON LTD has got intellectual property rights for 'GAS TREATMENT METHOD AND GAS TREATMENT DEVICE.' Other related details are as follows:
Application Number: JP,2021-201496
Category (FI): H10P50/28,H01L21/302,105@A,H01L21/302,101@B,H10P50/20,101@B,H10P50/20,105@A
Stage: PROBLEM TO BE SOLVED: To provide a gas treatment method and a gas treatment device capable of performing uniform treatment on the top and bottom of a recess in the gas treatment of a substrate having a recess with a high aspect ratio.SOLUTION: A gas processing method for gas-processing a substrate having a recess includes placing a substrate having a recess in a chamber, supplying a pressure adjusting gas into the evacuated chamber to raise the pressure in the chamber to adjust the pressure to a predetermined pressure, and causing processing reaction with a processing gas in the chamber to perform gas processing on the side wall of the recess of the substrate, and a processing gas that causes processing reaction is used as at least a portion of the pressure adjusting gas when performing pressure adjustment.SELECTED DRAWING: Figure 11 (Grant)
Filing Date: Dec. 13, 2021
Publication Date: June 23, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
