Japan, Feb. 24 -- PANASONIC HOLDINGS CORP has got intellectual property rights for 'GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL.' Other related details are as follows:
Application Number: JP,2024-091136
Category (FI): C30B25/02@Z,C30B29/38@D
Stage: PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride crystal having excellent conductivity, and a low extinction coefficient.SOLUTION: A manufacturing method of a group III nitride crystal has the steps of: introducing a group III element-containing gas, a nitrogen element-containing gas, an N-type dopant-containing gas, and a hydrogen element-containing gas; and producing and growing the group III nitride crystal on a seed substrate by reacting the group III element-containing gas, the nitrogen element-containing gas, the N-type dopant-containing gas, and the hydrogen element-containing gas that have been introduced. The group III nitride crystal has the N-type dopant doped and the hydrogen element doped, a concentration of the N-type dopant is 1x1020 cm-3 or more, and a concentration of the hydrogen element is 1x1019 cm-3 or more.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: June 5, 2024
Publication Date: Aug. 21, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
