Japan Intellectual Property Rights: HARD MASK, SUBSTRATE PROCESSING METHOD, AND REMOVAL METHOD FOR HARD MASK

Japan, Feb. 24 -- TOKYO ELECTRON LTD has got intellectual property rights for 'HARD MASK, SUBSTRATE PROCESSING METHOD, AND REMOVAL METHOD FOR HARD MASK.' Other related details are as follows:

Application Number: JP,2022-031091

Category (FI): H01L21/302,105@A,H10P50/20,105@A,H10P50/28,H10P50/24

Stage: PROBLEM TO BE SOLVED: To provide a hard mask which improves a selection ratio with respect to a processing target and can be thinned, a substrate processing method, and a removal method for the hard mask.SOLUTION: A hard mask used for etching a processing target includes an oxide containing one or two or more of gallium, indium and zinc.SELECTED DRAWING: Figure 6 (Grant)

Filing Date: March 1, 2022

Publication Date: Sept. 13, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.