Japan, July 14 -- APPLIED MATERIALS INC has got intellectual property rights for 'MANUFACTURING OF VERTICAL TRANSISTOR INTENDED FOR MEMORY.' Other related details are as follows:
Application Number: JP,2023-184098
Category (FI): H01L29/78,371,H10D30/68,H10P14/692@A,H10D30/69,H01L21/316@A,H10B43/27
Stage: PROBLEM TO BE SOLVED: To provide apparatus and method for forming a stepped structure, which include accurate profile and dimensional control for manufacturing a three-dimensional (3D) laminated memory cell semiconductor device.SOLUTION: A memory cell device includes: a film stack that has a pair of staggered dielectric layer 916 and conductive structure 912 formed in a horizontal direction on a substrate and includes a pair including a second layer 604b; an opening 606 that is formed in the film stack and filled with a channel layer 702 and a center packed bed 706; and a protective liner layer 902 disposed between the conductive structure and the channel layer.SELECTED DRAWING: Figure 10 (Grant)
Filing Date: Oct. 26, 2023
Publication Date: Feb. 14, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
