Japan, Oct. 21 -- SICOXS CORP has got intellectual property rights for 'METHOD FOR MANUFACTURING POLYCRYSTAL SILICON CARBIDE SUBSTRATE.' Other related details are as follows:
Application Number: JP,2021-171430
Category (FI): C23C16/02,C30B25/18,C23C16/42,C30B29/36@A,H10P52/00@C,H01L21/304,631
Stage: Grant (IP right granted following substantive examination.)
Filing Date: Oct. 20, 2021
Publication Date: May 2, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
