Japan, Sept. 16 -- KIOXIA CORP has got intellectual property rights for 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2022-098828
Category (FI): H01L29/78,371,H10B80/00,H10B43/27,H10B41/27,H10D30/01,501,H10D30/68,H10D30/69,H10W90/20@Z,H10W80/00@A,H10W80/00@Z,H10P10/00@A,H10P10/00@X,H01L25/08@Y,H01L21/02@B,H01L21/02@C,H01L27/11582,H01L27/11556
Stage: PROBLEM TO BE SOLVED: To properly join a plurality of substrates.SOLUTION: According to one embodiment, a method for manufacturing a semiconductor device includes steps of: forming a fist structure on a first substrate; forming a first joined body by joining a support substrate having lower rigidity than the first substrate to a first principal surface on which the first structure in the first substrate is formed, removing the first substrate from the first joined body; forming a second structure on a second substrate; forming a third structure on a third substrate; forming a second joined body by joining a second principal surface on which the second structure in the second substrate is formed and a third principal surface on which the third structure in the third substrate is formed; removing the second substrate from the second joined body; forming a third joined body by joining a fourth principal surface exposed by removing the first substrate in the first joined body and a fifth principal surface exposed by removing the second substrate in the second joined body; and removing the support substrate from the third joined body.SELECTED DRAWING: Figure 5 (Grant)
Filing Date: June 20, 2022
Publication Date: Jan. 5, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
