Japan, July 14 -- TOSHIBA CORP,TOSHIBA ELECTRONIC DEVICES & STORAGE CORP has got intellectual property rights for 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2023-044971
Category (FI): H01L21/304,621@E,H10P52/00@Y,H10P52/00@R
Stage: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can be easily manufactured.SOLUTION: Provided is a method of manufacturing a semiconductor device from a semiconductor substrate, a substrate and a sheet. The semiconductor substrate includes a first part including a first surface and a second surface provided on an opposite side of the first surface, and an annular second part surrounding the second surface and protruding from the second surface in a direction perpendicular to the second surface. The substrate has a first conductive film provided in contact with a top surface and an inner side surface of the second part, and the second surface. The sheet is attached to the first conductive film provided in contact with the top surface and the inner side surface of the second part, and the second surface. The method includes: separating the second part from the first part by pressing a polishing tape against the first surface provided on an opposite side of the second part and polishing the semiconductor substrate; and cutting the first conductive film between the first part and the separated second part by pressing the polishing tape against the first conductive film between the first part and the separated second part and polishing the first conductive film.SELECTED DRAWING: Figure 5 (Grant)
Filing Date: March 22, 2023
Publication Date: Oct. 4, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
