Japan Intellectual Property Rights: METHOD OF PLASMA-ETCHING FEATURE, SUBSTRATE FORMED THEREBY, AND DEVICE FOR PLASMA ETCHING

Japan, March 3 -- SPTS TECHNOLOGIES LTD has got intellectual property rights for 'METHOD OF PLASMA-ETCHING FEATURE, SUBSTRATE FORMED THEREBY, AND DEVICE FOR PLASMA ETCHING.' Other related details are as follows:

Application Number: JP,2025-015316

Category (FI): H01L21/302,101@C,H01L21/302,105@A,H10P50/20,101@C,H10P50/20,105@A

Stage: Grant (IP right granted following substantive examination.)

Filing Date: Jan. 31, 2025

Publication Date: April 15, 2025

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.