Japan Intellectual Property Rights: METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT

Japan, Jan. 15 -- APPLIED MATERIALS INC has got intellectual property rights for 'METHODS FOR FORMING FILMS CONTAINING SILICON BORON WITH LOW LEAKAGE CURRENT.' Other related details are as follows:

Application Number: JP,2024-066173

Category (FI): C23C16/42,H01L21/318@B,H01L21/31@C,H10P14/60,101@C,H10P14/694@B

Stage: Grant (IP right document published.)

Filing Date: April 16, 2024

Publication Date: Aug. 6, 2024

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.