Japan, Sept. 18 -- TOPPAN PHOTOMASK CO LTD has got intellectual property rights for 'PHASE SHIFT MASK AND METHOD FOR MANUFACTURING PHASE SHIFT MASK.' Other related details are as follows:
Application Number: JP,2022-013549
Category (FI): G03F1/32,G03F1/80,G03F1/74,G03F1/54,G03F1/29
Stage: PROBLEM TO BE SOLVED: To provide a phase shift mask having less haze defect, that is, can sufficiently suppress generation of haze, and a method for manufacturing the phase shift mask.SOLUTION: Exposure light of the wavelength 200nm or less is applied to a phase shift mask 100 according to the embodiment and the phase shift mask is equipped with a circuit pattern, and comprises: a substrate 11; a phase shift film 12 which is formed on the substrate 11, and equipped with a circuit pattern; and a protection film 13 formed on a top face 12t and a side face 12s of the phase shift film 12, where the phase shift film 12 is capable of adjusting a predetermined quantity of phase and transmittance to transmitting exposure light, the protection film 13 has a refraction index n to exposure light within the range of 1.2 or more and 2.6 or less, and an extinction coefficient k within the range of 0.0 or more and 0.4 or less, and when the film thickness of the phase shift film 12 is d1, and the film thickness of the protection film 13 is d2, d2 is thinner than d1, and d2 is 15nm or less.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: Jan. 31, 2022
Publication Date: Aug. 10, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
