Japan, Feb. 27 -- HITACHI HIGH-TECH CORP has got intellectual property rights for 'PLASMA PROCESSING APPARATUS.' Other related details are as follows:
Application Number: JP,2023-136280
Category (FI): H10P50/20,101@D,H10P50/20,103,H01L21/302,103,H01L21/302,101@D
Stage: PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that is not affected by a decrease in intensity of light caused by misalignment of optical axes of an irradiating unit and a light receiving unit.SOLUTION: A plasma processing apparatus includes:a processing chamber in which plasma is formed; a sample stage that is disposed inside the processing chamber and allows a wafer 109 to be placed thereon; a light transmissive dielectric window that is disposed above the sample stage, and allows an electric field for forming the plasma to be transmitted therethrough; an irradiating unit 181 that irradiates the wafer 109 with light and a light receiving unit 182 that receives light irradiated from the irradiating unit 181 and reflected from an upper surface of the wafer 109, the irradiating unit and the light receiving unit being arranged above the dielectric window so as to be spaced apart from each other in a first direction along an upper surface of the sample stage; and a control unit and a storage unit. Each of the irradiating unit 181 and the light receiving unit 182 is configured to be movable in the first direction, and the control unit adjusts a position of the irradiating unit 181 or the light receiving unit 182 such that the intensity of the light received by the light receiving unit 182 is equal to or greater than a threshold value stored in the storage unit.SELECTED DRAWING: Figure 2 (Grant)
Filing Date: Aug. 24, 2023
Publication Date: March 7, 2025
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
