Japan, Sept. 16 -- ROHM CO LTD has got intellectual property rights for 'SCHOTTKY BARRIER DIODE.' Other related details are as follows:
Application Number: JP,2022-178599
Category (FI): H10D64/23@D,H10D64/64,H01L29/86,301@F,H01L29/48@F,H10D8/60@F
Stage: PROBLEM TO BE SOLVED: To provide a Schottky barrier diode capable of reducing a forward voltage.SOLUTION: A Schottky barrier diode comprises: a first conductivity type semiconductor substrate 1; a first conductivity type semiconductor layer 2 including a first conductivity type region 21 and a first conductivity type impurity region 22; a first electrode layer 3; a second electrode layer 4; a second external terminal 7 conducting to the first electrode layer; and a second external terminal 7 conducting to the second electrode layer. The first electrode layer 3 includes a first base part 30, a first extension part 31 and a second extension part 32. The second electrode layer 4 includes a second base part 40 and a third extension part 43 which is positioned between the first extension part 31 and the second extension part 32 in a second direction (y).SELECTED DRAWING: Figure 1 (Grant)
Filing Date: Nov. 8, 2022
Publication Date: May 20, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
