Japan, Feb. 24 -- MITSUBISHI ELECTRIC CORP has got intellectual property rights for 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND POWER CONVERTER.' Other related details are as follows:
Application Number: JP,2022-115749
Category (FI): H01L23/36@D,H10W90/00,800,H10W40/60@M,H01L25/04@C
Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device with improved reliability and a power converter using the semiconductor device.SOLUTION: A semiconductor device 1 has a semiconductor element 2, a first heat-dissipating substrate 4, a second heat-dissipating substrate 5, and a heat-dissipating block 6. The semiconductor element 2 has an electrode 3. The semiconductor element 2 is mounted on the first heat-dissipating substrate 4. The heat-dissipating block 6 is positioned opposite the electrode 3. The second heat-dissipating substrate 5 is disposed opposite the electrode 3 as seen from the heat-dissipating block 6. A bonding material 13 covers the side of the heat-dissipating block 6 and is in contact with the electrode 3 of the semiconductor element 2 and the second heat-dissipating substrate 5.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: July 20, 2022
Publication Date: Feb. 1, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
