Japan, March 5 -- HITACHI POWER SEMICONDUCTOR DEVICE LTD has got intellectual property rights for 'SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2022-048148
Category (FI): H10W90/00,600,H10W90/00,800,H01L25/00@B,H10W90/00,750,H01L25/04@B
Stage: PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving Pb-free and the suppression of cracks in a semiconductor chip with a simple process when electronic components are highly densely mounted in a compact package.SOLUTION: A semiconductor device includes a semiconductor chip 1, a control circuit chip 3, a capacitor 2, a chip upper electrode 4, a first lead frame 7, a second lead frame 7B, a lead electrode 10, and a base electrode 9. The chip upper electrode is joined, to an upper face of the semiconductor chip, with a joining material that does not contain lead, and the first lead frame is joined, to a lower face of the semiconductor chip, with a joining material that does not contain lead. The end portion of the junction between the chip upper electrode and the semiconductor chip is located inside than the end portion of the semiconductor chip, and the end portion of the first lead frame is located outside than the end portion of the semiconductor chip. The control circuit chip and the capacitor are joined to the second lead frame, respectively. The semiconductor device has an external shape of 20 mm or less, and the thickness of the first lead frame is greater than the thickness of the second lead frame.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: March 24, 2022
Publication Date: Oct. 5, 2023
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
