Japan, July 14 -- SEMICONDUCTOR ENERGY LAB CO LTD has got intellectual property rights for 'SEMICONDUCTOR DEVICE.' Other related details are as follows:
Application Number: JP,2025-028895
Category (FI): H10B12/00,801,H10D86/40,101@B,H10D86/40,101@Z,H10D30/67,103@B,H10D30/67,102@M,H10D84/80,101@A,H10D84/83@E,H10B41/70
Stage: PROBLEM TO BE SOLVED: To provide a transistor that uses an oxide semiconductor layer having electrical characteristics required in accordance with applications and to provide a semiconductor device having the transistor.SOLUTION: In a bottom-gate-type transistor in which at least a gate electrode layer, a gate insulating film, and a semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers having different energy gaps from each other is used as the semiconductor layer. Oxygen or/and a dopant may be introduced into the oxide semiconductor stacked layer.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: Feb. 26, 2025
Publication Date: May 13, 2025
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
