Japan, March 5 -- STANLEY ELECTRIC CO LTD has got intellectual property rights for 'SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING DEVICE.' Other related details are as follows:

Application Number: JP,2022-024633

Category (FI): H10H20/855,H10H20/833,H10H20/831,H10H20/856,H01L33/42,H01L33/38,H01L33/60,H10H20/01@Z,H10H29/14,H01L33/58

Stage: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and device that can achieve uniform current injection, uniform light emission, and a high light-emission efficiency.SOLUTION: A semiconductor light-emitting element comprises: a light-emitting function layer 15M configured by laminating on an insulative substrate 11 a first semiconductor layer 12 of a first polarity, a light-emitting layer 13, and a second semiconductor layer 14 of a second polarity; a first electrode layer 22 on the first semiconductor layer; a second electrode layer 23 on the second semiconductor layer; a first insulating layer 25 that covers the light-emitting function layer while exposing a part of the first and second electrode layers; a coating metal layer 26 that covers the light-emitting function layer, and are connected with the first electrode layer; a second insulating layer 27 that covers the coating metal layer; a first pad electrode 28A connected with the first electrode layer, and covering the light-emitting function layer and the first and second insulating layers; and a second pad electrode 28B connected with the coating electrode layer, and covering the light-emitting function layer and the first and second insulating layers. The light-emitting function layer has a pair of sides opposed to each other and has a pair of connection parts where the first semiconductor layer is exposed along the pair of sides. The first electrode layer is in Schottky contact with the pair of connection parts of the first semiconductor layer.SELECTED DRAWING: Figure 1B (Grant)

Filing Date: Feb. 21, 2022

Publication Date: Aug. 31, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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