Japan, Feb. 24 -- SICRYSTAL GMBH has got intellectual property rights for 'SiC CRYSTAL SUBSTRATE HAVING LATTICE PLANE ORIENTATION OPTIMUM FOR CRACK REDUCTION, AND MANUFACTURING METHOD THEREOF.' Other related details are as follows:
Application Number: JP,2021-115838
Category (FI): C30B29/36@A
Stage: PROBLEM TO BE SOLVED: To provide a single crystal 4H-SiC substrate having a specific orientation of crystal structures that is set so as to reduce or even eliminate occurrence of cracks or fissures during mechanical processing, and a manufacturing method thereof.SOLUTION: A single crystal 4H-SiC substrate has a longitudinal axis C and a side face parallel to the longitudinal axis and curved at least partially. Crystal structures of the 4H-SiC substrate are oriented so that a line segment that crosses a parallel cleavage surface having at least a prescribed minimum number per unit length with a prescribed shape exists at each position on the side face of a semi-product with respect to the longitudinal axis, and the line segment is defined by a plane that is in contact with the side surface at one point at the position.SELECTED DRAWING: Figure 13B (Grant)
Filing Date: July 13, 2021
Publication Date: Feb. 16, 2022
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
