Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, June 10 -- FUJI ELECTRIC CO LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2021-018623

Category (FI): H01L29/78,652@H,H01L29/78,652@J,H10D30/01,301@L,H10D30/66,101@H,H10D30/66,101@T,H01L29/78,658@L,H10D30/66,102,H01L29/78,652@T,H01L29/78,653@A,H10D30/66,201@A,H10P74/20@N,H01L21/66@N,H01L29/78,652@L

Stage: Grant (IP right document published.)

Filing Date: Feb. 8, 2021

Publication Date: Aug. 19, 2022

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.