Japan Intellectual Property Rights: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Japan, Oct. 30 -- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,FUJI ELECTRIC CO LTD has got intellectual property rights for 'SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE.' Other related details are as follows:

Application Number: JP,2022-017530

Category (FI): H10D30/66,201@A,H01L29/78,652@J,H01L29/78,652@T,H01L29/78,653@A,H01L29/78,658@A,H10D30/01,301@A,H10D30/66,101@C,H10D30/66,101@E,H10D30/66,101@H,H10D30/66,101@M,H10D30/66,101@T,H01L29/78,652@C

Stage: Grant (IP right document published.)

Filing Date: Feb. 7, 2022

Publication Date: Aug. 18, 2023

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

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