Japan, Sept. 18 -- DOWA METALTECH KK,TOKUYAMA CORP has got intellectual property rights for 'SINTERED ALUMINUM NITRIDE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND INSULATED BOARD FOR ELECTRONIC CIRCUIT.' Other related details are as follows:
Application Number: JP,2022-150062
Category (FI): H01B3/12,337,C04B35/582,H05K1/03,610@E,H01B5/14@Z
Stage: PROBLEM TO BE SOLVED: To improve partial discharge resistance of an insulated board for an electronic circuit by using a sintered aluminum nitride substrate.SOLUTION: A sintered aluminum nitride substrate is made of a sintered structure in which boron nitride particles are scattered in a sintered body of aluminum nitride particles, wherein: an area ratio of a region in which a surface of boron nitride particles appears in a reflection electron image observed on a fractured surface of the sintered structure is 1.0 to 5.0%; and when an interior of a contour of one region in which the surface of boron nitride particles appears is called one BN domain, an average aspect ratio, which is an average value of the long diameter/short diameter of the BN domain, is 6.0 or less.SELECTED DRAWING: Figure 4 (Grant)
Filing Date: Sept. 21, 2022
Publication Date: April 2, 2024
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
