Japan, Sept. 18 -- SUNRISE MEMORY CORP has got intellectual property rights for 'THREE-DIMENSIONAL NOR MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTOR.' Other related details are as follows:
Application Number: JP,2025-108863
Category (FI): H10B51/20,H10B51/30
Stage: PROBLEM TO BE SOLVED: To solve such a problem that ferroelectric field effect transistors of the prior art have low endurance.SOLUTION: A memory structure 10 includes storage transistors 20 organized as horizontal NOR memory strings, and the storage transistors are thin-film ferroelectric field-effect transistors having a ferroelectric gate dielectric layer 26 formed adjacent a semiconductor channel region 25. The semiconductor channel region is formed by an oxide semiconductor material, and the ferroelectric storage transistors are junctionless transistors with no p/n junction in a channel. The ferroelectric storage transistors 20 in each NOR memory string share a first conductive layer 16a as a common source line and a second conductive layer 18 as a common bit line, the first and second conductive layers being in electrical contact with the semiconductor channel.SELECTED DRAWING: Figure 1 (Grant)
Filing Date: June 27, 2025
Publication Date: Oct. 1, 2025
The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100
Disclaimer: Curated by HT Syndication.
