Japan Intellectual Property Rights: WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING JBS DIODE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND MANUFACTURING METHOD THEREOF

Japan, Jan. 20 -- STMICROELECTRONICS SRL has got intellectual property rights for 'WIDE BAND GAP SEMICONDUCTOR ELECTRONIC DEVICE COMPRISING JBS DIODE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND MANUFACTURING METHOD THEREOF.' Other related details are as follows:

Application Number: JP,2021-112285

Category (FI): H10P30/20@Z,H10P30/28@H,H01L29/91@K,H01L29/91@F,H01L29/86,301@F,H01L29/91@C,H10D64/60,H01L29/86,301@D,H01L29/48@D,H01L29/48@P,H01L21/28,301@B,H01L21/265@Z,H01L21/265,602@A,H10D8/50@C,H10D8/50@F,H10D8/50@K,H10D8/60@F,H10D8/60@D,H10D64/62@B,H10D64/64@B,H10D64/64@R

Stage: Grant (IP right document published.)

Filing Date: July 6, 2021

Publication Date: Jan. 27, 2022

The original document can be viewed at: https://www.j-platpat.inpit.go.jp/p0100

Disclaimer: Curated by HT Syndication.